Analytical model for predicting subthreshold slope improvement versus negative swing of S-shape polarization in a ferroelectric FET

Author

Rusu, Alexandru ; Ionescu, Adrian M.

Author_Institution

Ecole Polytech. Fed. de Lausanne, Lausanne, Switzerland

fYear

2012

fDate

24-26 May 2012

Firstpage

55

Lastpage

59

Abstract

In this paper we present and validate a model for predicting the inverse subthreshold slope, SS, improvement in a ferroelectric FET as a function of the negative swing (Landau´s α parameter), α=dP/dE of the polarization under negative capacitance operation. The model is experimentally validated at room temperature based on Fe-FET using a P(VDF-TrFE) copolymer as dielectric and showing sub-thermal swings over more than two orders of magnitude.

Keywords

dielectric materials; ferroelectric devices; field effect transistors; polymer blends; P(VDF-TrFE) dielectric copolymer; S-shape polarization negative swing; ferroelectric FET; inverse subthreshold slope prediction model; negative capacitance operation; sub-thermal swings; temperature 293 K to 298 K; Analytical models; Capacitance; Electric potential; Logic gates; MOSFETs; Fe-FET; Negative capacitance; PVDF; ferroelectric; surface potential amplification;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems (MIXDES), 2012 Proceedings of the 19th International Conference

Conference_Location

Warsaw

Print_ISBN

978-1-4577-2092-5

Type

conf

Filename

6226275