DocumentCode :
56425
Title :
Uniform-Base InP/GaInAsSb DHBTs Exhibiting 
Author :
Fluckiger, Ralf ; Lovblom, Rickard ; Alexandrova, Maria ; Ostinelli, Olivier ; Bolognesi, C.R.
Author_Institution :
Millimeter-Wave Electron. Group, ETH Zurich, Zurich, Switzerland
Volume :
35
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
166
Lastpage :
168
Abstract :
Type-II InP/GaInAsSb-based double heterojunction bipolar transistors (DHBTs) with fMAX=636 GHz and a simultaneous fT=424 GHz were realized with a 20-nm-thick compositionally uniform quaternary GaInAsSb base and a 125-nm InP collector. The GaInAsSb alloy exhibits superior electron and hole transport properties compared with GaAsSb, resulting in improved device performance. The present transistors offer the highest fMAX to date for GaInAsSb DHBTs and match the highest fMAX of any Sb-based DHBT.
Keywords :
III-V semiconductors; gallium compounds; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; GaInAsSb alloy; InP collector; InP-GaInAsSb; compositionally uniform quaternary GaInAsSb; double heterojunction bipolar transistors; frequency 424 GHz; frequency 636 GHz; hole transport properties; size 125 nm; size 20 nm; superior electron properties; uniform-base DHBT; Cutoff frequency; Double heterojunction bipolar transistors; Indium; Indium phosphide; Radio frequency; Resistance; DHBTs; GaAsSb; GaInAsSb; mm-wave transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2295424
Filename :
6709773
Link To Document :
