Title :
Physical synthesis onto a Sea-of-Tiles with double-gate silicon nanowire transistors
Author :
Bobba, Shashikanth ; De Marchi, Michele ; Leblebici, Yusuf ; De Micheli, Giovanni
Author_Institution :
LSI, EPFL, Lausanne, Switzerland
Abstract :
We have designed and fabricated double-gate ambipolar field-effect transistors, which exhibit p-type and n-type characteristics by controlling the polarity of the second gate. In this work, we present an approach for designing an efficient regular layout, called Sea-of-Tiles (SoTs). First, we address gate-level routing congestion by proposing compact layout techniques and novel symbolic-layout styles. Second, we design four logic tiles, which form the basic building block of the SoT fabric. We run extensive comparisons of mapping standard benchmarks on the SoT. Our study shows that SoT with TileG2 and TileG1h2, on an average, outperforms the one with TileG1 and TileG3 by 16% and 10% in area utilization, respectively.
Keywords :
elemental semiconductors; field effect transistors; integrated circuit layout; logic arrays; logic circuits; logic design; logic gates; nanoelectronics; nanowires; silicon; SoT fabric; TileG2; TileG1h2; area utilization; double-gate ambipolar field-effect transistor design; double-gate ambipolar field-effect transistor fabrication; double-gate silicon nanowire transistors; gate polarity; gate-level routing congestion; logic tile design; n-type characteristics; p-type characteristics; physical synthesis; sea-of-tiles; symbolic-layout styles; CMOS integrated circuits; Layout; Logic gates; Routing; Silicon; Tiles; Transistors; Ambipolar devices; Regular layouts; Silicon Nanowire FET; Tile;
Conference_Titel :
Design Automation Conference (DAC), 2012 49th ACM/EDAC/IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4503-1199-1