• DocumentCode
    565168
  • Title

    mLogic: Ultra-low voltage non-volatile logic circuits using STT-MTJ devices

  • Author

    Morris, D. ; Bromberg, D. ; Jian-Gang Zhu ; Pileggi, Larry

  • Author_Institution
    Dept. of ECE, Carnegie Mellon Univ., Pittsburgh, PA, USA
  • fYear
    2012
  • fDate
    3-7 June 2012
  • Firstpage
    486
  • Lastpage
    491
  • Abstract
    This paper introduces the design of logic circuits based exclusively on novel magnetoelectronic devices. Current signals are steered by 2× resistance change switching while operating with sub-100 mV voltage pulses for power and synchronization. The inherent memory of the devices results in fully pipelined nonvolatile logic. We demonstrate that co-optimization of the devices, circuits and logic can achieve ultra-low energy-per-operation for design examples.
  • Keywords
    MRAM devices; integrated circuit design; logic design; magnetic tunnelling; MRAM; STT-MTJ devices; device cooptimization; logic circuit design; mLogic; magnetic tunnel junctions; magnetoelectronic devices; ultra low voltage nonvolatile logic circuits; ultra-low energy-per-operation; voltage 100 mV; voltage pulses; CMOS integrated circuits; Clocks; Logic gates; Magnetic tunneling; Magnetoelectronics; Resistance; Switches; Emerging Circuits and Devices; MRAM; Magnetic Logic; Spin-Transfer Torque; Spintronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2012 49th ACM/EDAC/IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-4503-1199-1
  • Type

    conf

  • Filename
    6241550