• DocumentCode
    565248
  • Title

    TSV open defects in 3D integrated circuits: Characterization, test, and optimal spare allocation

  • Author

    Ye, Fangming ; Chakrabarty, Krishnendu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Duke Univ., Durham, NC, USA
  • fYear
    2012
  • fDate
    3-7 June 2012
  • Firstpage
    1024
  • Lastpage
    1030
  • Abstract
    Three-dimensional integration based on die/wafer stacking and through-silicon-vias (TSVs) promises to overcome interconnect bottlenecks for nanoscale integrated circuits (ICs). However, TSVs are prone to defects such as shorts and opens that affect circuit operation in stacked ICs. We analyze the impact of open defects on TSVs and describe techniques for screening such defects. The proposed characterization technique estimates the additional delay introduced due to a resistive open defect as well as due to rerouting based on spare TSVs. We also present an optimization method based on integer linear programming (ILP) that allocates spares to functional TSVs such that the spare for a functional TSV is neither too close to a functional TSV (to avoid the case of both functional and spare TSV being defective) nor too far to ensure that the additional delay due to rerouting is below an upper limit. Results are presented using Hspice simulations based on a 45 nm predictive technology model, recently published data on TSV parasitics, and a commercial ILP solver.
  • Keywords
    SPICE; circuit simulation; integer programming; integrated circuit testing; linear programming; nanoelectronics; network analysis; network routing; three-dimensional integrated circuits; 3D integrated circuits; Hspice simulations; ILP solver; TSV open defects; TSV testing; circuit operation; defect screening; delays; die-wafer stacking; functional TSV; integer linear programming; nanoscale integrated circuits; optimal spare allocation; optimization method; predictive technology model; rerouting; resistive open defect; short defects; spare TSV; stacked IC; three-dimensional integrated circuit; through-silicon-vias; upper limit; Delay; Integrated circuit interconnections; Integrated circuit modeling; Maintenance engineering; Resistance; Through-silicon vias; Wires; 3D-ICs; ILP; TSV redundancy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design Automation Conference (DAC), 2012 49th ACM/EDAC/IEEE
  • Conference_Location
    San Francisco, CA
  • ISSN
    0738-100X
  • Print_ISBN
    978-1-4503-1199-1
  • Type

    conf

  • Filename
    6241630