DocumentCode
565864
Title
Prediction of the Conduction Interference in IGBT series structure converter
Author
Gu, Zao-Gen ; Wen, Chuan-Xin ; Zhao, Xiao-dong ; Di, Wu
Author_Institution
Power Electronics Dept., China Electric Power Research Institute, No.8 Nanrui Rd., Nanjing 210003, China
Volume
1
fYear
2012
fDate
2-5 June 2012
Firstpage
673
Lastpage
677
Abstract
The transmission path of the Conduction Interference is proposed after analyzing the converter valve´s mechanism of the noise emission. Using the Fourier transformation theory to get the spectrum of the converter´s Common mode voltage and Differential mode voltage by the two different modulation methods (SPWM and SVPWM), as well as the dead time affects on the Emission. It´s conclude that the IGBT´s characterized model, the parasitic parameter extraction and the controller model are all make great contributed to the precise of the forecast result. The simulations based on ANSOFT indicate the reliability of the model and the formulas of spatial frequency spectrum.
Keywords
Electromagnetic interference; Inductance; Insulated gate bipolar transistors; Noise; Pulse width modulation; Switches; EMI; PWM; characterized model; converter; dead time; parasitic parameter;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Motion Control Conference (IPEMC), 2012 7th International
Conference_Location
Harbin, China
Print_ISBN
978-1-4577-2085-7
Type
conf
DOI
10.1109/IPEMC.2012.6258826
Filename
6258826
Link To Document