Depth profiling study on amorphous InGaZnO4 thin-film transistors by X-ray photoelectron spectroscopy

Author

Iwamatsu, Shinnosuke ; Takechi, Kazushige ; Yahagi, Toru ; Watanabe, Yoshihiro ; Tanabe, Hiroshi ; Kobayashi, S.

Author_Institution

MEMS Lab., Yamagata Res. Inst. of Technol., Yamagata, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

139

Lastpage

142

Abstract

This paper presents XPS depth profiling study on the materials used in amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) having Ti and Mo source/drain (S/D) electrodes. The XPS results suggest that there are some differences between Ti/a-IGZO and Mo/a-IGZO interface regions for the chemical states of the materials. The chemical states of the back-channel surfaces are also found to be different for Ti and Mo.

Keywords

X-ray photoelectron spectra; amorphous semiconductors; electrodes; gallium compounds; indium compounds; molybdenum; semiconductor thin films; thin film transistors; titanium; zinc compounds; InGaZnO₄-Mo; InGaZnO₄-Ti; Mo source-drain electrode; Mo/a-IGZO interface region; Ti source-drain electrode; Ti/a-IGZO interface region; X-ray photoelectron spectroscopy; XPS depth profiling; amorphous indium-gallium-zinc oxide thin-film transistors; back-channel surfaces; material chemical states; Chemicals; Electrodes; Materials; Plasmas; Sputtering; Surface treatment; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294863