• DocumentCode
    567988
  • Title

    Improved performance of top contact organic thin film transistors with bilayer WO3/Au electrodes

  • Author

    Alam, M.W. ; Wang, Zhen ; Naka, Shigeyuki ; Okada, H.

  • Author_Institution
    Grad. Sch. of Sci. & Eng., Univ. of Toyama, Toyama, Japan
  • fYear
    2012
  • fDate
    4-6 July 2012
  • Firstpage
    187
  • Lastpage
    190
  • Abstract
    We have fabricated a top contact pentacene-based organic thin-film transistors (OTFTs) with bi-layer WO3/Au electrodes. We have obtained that the performance and the field-effect mobility of the devices with bilayer WO3/Au electrode was highly improved by comparing with pentacene based transistor without WO3 layer. The field-effect mobility was increased from 0.47 cm2/Vs to 0.69 cm2/Vs in the device with bilayer WO3/Au electrodes. From temperature dependence characteristics and surface morphology of pentacene, the improved device performance was due to the reduction in barrier height and surface roughness after inserting a suitable transitions metal oxide layer between the pentacene and the gold electrodes.
  • Keywords
    electrodes; gold; organic semiconductors; semiconductor thin films; surface morphology; surface roughness; thin film transistors; tungsten compounds; WO3-Au; barrier height; bilayer electrodes; field-effect mobility; gold electrodes; surface morphology; surface roughness; temperature dependence; top contact pentacene-based organic thin film transistors; Electrodes; Gold; Organic thin film transistors; Pentacene; Performance evaluation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-1-4673-0399-6
  • Type

    conf

  • Filename
    6294876