Structural and electrical properties of Al2O3 film grown by mist chemical vapour deposition

Author

Kawaharamura, Toshiyuki ; Dapeng, Wang ; Toda, Tetsuya ; Li, Chaoyang ; Furuta, Mamoru

Author_Institution

Inst. for Nanotechnol., Kochi Univ. of Technol., Kami, Japan

fYear

2012

fDate

4-6 July 2012

Firstpage

243

Lastpage

246

Abstract

Aluminium oxide (AlO_x) thin film was grown using aluminium acetylacetonate (AlAcac₃) as a source solute by mist chemical vapour deposition (CVD). The AlO_x thin film grown at 430°C exhibited the breakdown field (E_BD) and the dielectric constant (k) of 5.9 MV/cm and 6.8, respectively. It was suggested that the formation of boehmite (γ-AlO(OH)) in the films decreased the E_BD of AlO_x thin films at the growth temperatures below 350°C. In the mist CVD, the reaction proceeded efficiently (E_a = 23.5-26 kJ/mol) under the evaporated solvent atmosphere. The AlO_x film was able to be grown at 430°C with high deposition ratio (18 nm/min) and smooth surface (RMS =1.6 nm).

Keywords

aluminium compounds; chemical vapour deposition; electric breakdown; permittivity; thin films; Al₂O₃; aluminium acetylacetonate; boehmite; breakdown field; deposition ratio; dielectric constant; electrical properties; evaporated solvent atmosphere; growth temperature; mist CVD; mist chemical vapour deposition; smooth surface; structural properties; temperature 350 degC; temperature 430 degC; thin films; Aluminum oxide; Atmosphere; Chemical vapor deposition; Electric breakdown; Films; Substrates; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294894