CIGS solar cell on flexible stainless steel substrate fabricated by sputtering method: Simulation and experimental results

Author

Zhang, Rui ; Hollars, Dennis R. ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2012

fDate

4-6 July 2012

Firstpage

289

Lastpage

292

Abstract

We reported on optoelectronic properties of the Cu(InGa)Se₂ (CIGS) solar cell fabricated by sputtering method on stainless steel substrate having external efficiency of ~13.0%. Experimental data indicates that the quantum efficiency (QE) has a high response for long wavelength light. Current density (J) - voltage (V) measurements under illumination resulted in short circuit current density of 32.08 mA/cm² and open circuit voltage of 0.55 V. We have also performed modeling of this device establishing that both experimental and calculated data are consistent with each other.

Keywords

copper compounds; current density; gallium compounds; indium compounds; semiconductor growth; short-circuit currents; solar cells; sputter deposition; ternary semiconductors; CIGS solar cell; CuInGaSe₂; current density-voltage measurements; flexible stainless steel substrate; open circuit voltage; opto-electronic properties; quantum efficiency; short circuit current density; sputtering method; Lighting; Performance evaluation; Photovoltaic cells; Resistance; Sputtering; Steel; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Conference_Location

Kyoto

Print_ISBN

978-1-4673-0399-6

Type

conf

Filename

6294907