Junction Temperature Measurement of IGBTs Using Short-Circuit Current as a Temperature-Sensitive Electrical Parameter for Converter Prototype Evaluation

This paper proposes a method to measure the junction temperatures of insulated-gate bipolar transistors (IGBTs) during the converter operation for prototype evaluation. The IGBT short-circuit current is employed as the temperature-sensitive electrical parameter (TSEP). The calibration experiments show that the short-circuit current has an adequate temperature sensitivity of 0.35 A/°C. The parameter also has good selectivity and linearity, which makes it suitable to be used as a TSEP. Test circuit and hardware design are proposed for the IGBT junction temperature measurement in various power electronics dc-dc and ac-dc converter applications. By connecting a temperature measurement unit to the converter and giving a short-circuit pulse during the converter operation, the short-circuit current is measured, and the IGBT junction temperature can be derived from the calibration curve. The proposed temperature measurement method is a valuable tool for prototype evaluation and avoids the unnecessary safety margin regarding device operating temperatures, which is significant particularly for high-temperature/high-density converter applications.