DocumentCode :
568836
Title :
Prospects for MEMS on high-index silicon combining bulk micromachining and PolyMEMS INAOE technology
Author :
Martínez-Mateo, H.E. ; De la Hidalga-W, F.J. ; Torres, A. ; Zúñiga, C. ; Linares, M. ; Molina, J. ; Moreno, M. ; Rosales, P. ; Reyes, C. ; Hernández, L. ; De Rivera, L. Niño ; Calleja, W.
Author_Institution :
ESIME-UPC. Mexico D.F LI-MEMS INAOE, Nat. Polytech. Inst. (IPN), Puebla, Mexico
fYear :
2012
fDate :
9-10 Aug. 2012
Firstpage :
101
Lastpage :
105
Abstract :
High-index silicon substrates are proposed as an alternative for the development of a new type of microsystems. Both bulk and surface micromachining techniques could be developed in combination with MOS circuits, offering new possibilities of applications, based on a combined intra- and post-processing approach without affecting the interface atomic texture of high-index substrates. As an example of microsystems on high-index silicon we present a culture cell design which can be developed taking into account the advantages of bulk micromachining and CMOS circuits. This example clarifies the aim of the new high-index silicon MEMS technology proposed in this work.
Keywords :
CMOS integrated circuits; elemental semiconductors; micromachining; silicon; CMOS circuits; MOS circuits; Si; high-index silicon MEMS technology; high-index silicon combining bulk micromachining; high-index substrates; interface atomic texture; intraprocessing approach; microsystems; polyMEMS INAOE technology; post-processing approach; surface micromachining techniques; Fabrication; Films; Micromachining; Microstructure; Silicon; Substrates; Surface morphology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro-Nanoelectronics, Technology and Applications (EAMTA), 2012 Argentine School of
Conference_Location :
Cordoba
Print_ISBN :
978-1-4673-2696-4
Type :
conf
Filename :
6297326
Link To Document :
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