DocumentCode
56889
Title
Analysis of Nano-Structured 
Thin Film 
Sensor b
Author
Mariappan, Chinnasamy Ramaraj ; Prabhu, E. ; Gnanasekar, Kovilpillai Immanuel ; Jayaraman, Vijaysekhar ; Gnanasekaran, T.
Author_Institution
Chem. Group, Indira Gandhi Centre for Atomic Res., Kalpakkam, India
Volume
14
Issue
3
fYear
2014
fDate
Mar-14
Firstpage
651
Lastpage
656
Abstract
Nano-structured In2O3 thin film was made using a pulsed laser deposition technique. The surface topography and structural properties of the thin film were characterized by atomic force microscopy and X-ray diffraction, respectively. Complex impedance spectroscopy of In2O3 thin film gas sensor was investigated from 275 °C to 425 °C when exposed into clean air and air containing a trace level of NOx. Significant NOx sensing characteristics of thin film were observed at 325 °C by ac impedance spectroscopic analysis. The resistance and capacitance of indium oxide film increased when exposed into the trace level of NOx. A mechanism for this increase of resistance and capacitance is proposed.
Keywords
X-ray diffraction; atomic force microscopy; gas sensors; indium compounds; nanosensors; nanostructured materials; nitrogen compounds; surface topography; thin film sensors; AC impedance spectroscopic analysis; In2O3-NOx; X-ray diffraction; atomic force microscopy; nanostructured thin film gas sensor; pulsed laser deposition technique; structural property; surface topography; temperature 275 degC to 425 degC; Capacitance; Films; Gas detectors; Impedance; Resistance; Space charge; ${rm In}_{2}{rm O}_{3}$
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2013.2286198
Filename
6636050
Link To Document