• DocumentCode
    569820
  • Title

    An Improved Design of Key Analog Circuits in CMOS Image Sensor

  • Author

    Wen Wei Lin ; Zhong Zhuang Fang ; Ke Jie Chi

  • Author_Institution
    Sch. of Photoelectronic Inf. & Commun. Eng., Beijing Inf. Sci. & Technol. Univ., Beijing, China
  • fYear
    2012
  • fDate
    17-19 Aug. 2012
  • Firstpage
    951
  • Lastpage
    954
  • Abstract
    CMOS image sensors transmit images by photoelectric conversion and consist of several key analog circuits. We discuss the structure and the overall operating principles of typical CMOS image sensor, and conduct analysis of the key analog circuits function. We carry out the discussion of the theoretical and mathematical principles of those circuits and then we design certain improved key analog circuits on the base of the SMIC 0.5μm 2P3M CMOS craft, such as the pixel cell array circuit, the correlated sampling circuit as well as the Bandgap reference circuit. Our improved designs have improved characteristics such as high output swings, high temperature stability and relatively low room occupation.
  • Keywords
    CMOS image sensors; analogue circuits; integrated circuit design; photoelectric devices; CMOS craft; CMOS image sensors; SMIC; key analog circuits; photoelectric conversion; pixel cell array circuit; Analog circuits; Arrays; CMOS image sensors; Noise; Photodiodes; Photonic band gap; Power supplies; CMOS; correlated double sampling; pixel; reference voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational and Information Sciences (ICCIS), 2012 Fourth International Conference on
  • Conference_Location
    Chongqing
  • Print_ISBN
    978-1-4673-2406-9
  • Type

    conf

  • DOI
    10.1109/ICCIS.2012.69
  • Filename
    6301441