DocumentCode
569820
Title
An Improved Design of Key Analog Circuits in CMOS Image Sensor
Author
Wen Wei Lin ; Zhong Zhuang Fang ; Ke Jie Chi
Author_Institution
Sch. of Photoelectronic Inf. & Commun. Eng., Beijing Inf. Sci. & Technol. Univ., Beijing, China
fYear
2012
fDate
17-19 Aug. 2012
Firstpage
951
Lastpage
954
Abstract
CMOS image sensors transmit images by photoelectric conversion and consist of several key analog circuits. We discuss the structure and the overall operating principles of typical CMOS image sensor, and conduct analysis of the key analog circuits function. We carry out the discussion of the theoretical and mathematical principles of those circuits and then we design certain improved key analog circuits on the base of the SMIC 0.5μm 2P3M CMOS craft, such as the pixel cell array circuit, the correlated sampling circuit as well as the Bandgap reference circuit. Our improved designs have improved characteristics such as high output swings, high temperature stability and relatively low room occupation.
Keywords
CMOS image sensors; analogue circuits; integrated circuit design; photoelectric devices; CMOS craft; CMOS image sensors; SMIC; key analog circuits; photoelectric conversion; pixel cell array circuit; Analog circuits; Arrays; CMOS image sensors; Noise; Photodiodes; Photonic band gap; Power supplies; CMOS; correlated double sampling; pixel; reference voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational and Information Sciences (ICCIS), 2012 Fourth International Conference on
Conference_Location
Chongqing
Print_ISBN
978-1-4673-2406-9
Type
conf
DOI
10.1109/ICCIS.2012.69
Filename
6301441
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