• DocumentCode
    569872
  • Title

    Manifold decomposition processes of silicone vapor and electrical contact failure

  • Author

    Tamai, Terutaka ; Sawada, Syo ; Hattori, Yoshiyuki

  • Author_Institution
    ElConTech Consulting Ltd., Shiroi, Japan
  • fYear
    2012
  • fDate
    14-17 May 2012
  • Firstpage
    261
  • Lastpage
    266
  • Abstract
    Adsorbed silicone vapor on contact surfaces decomposes typically to SiO2 by elevated temperature due to discharge or Joule heating. However, even if temperature is lower than decomposition temperature, weak decomposition is induced in very complex states. Namely, silicone molecule has an equilibrium reaction from linear molecular structure to ring structure, or its reverse reaction in the room temperature. Furthermore, in the oxidation process, as the molecular changes various structures and causes imperfect decomposition, and various types of compounds occur. In the present paper, electrical condition of load and occurrence of the failure due to silicone vapor contamination were discussed with practical examples. And it was clarified that various high polymer silicone compounds including liquid are formed by their polymerization in the decomposing process. Furthermore, a mechanism of formation of carbon from the silicon vapor under this process is also discussed.
  • Keywords
    electrical contacts; polymerisation; silicon compounds; Joule heating; SiO2; contact surfaces; decomposition temperature; electrical contact; liquid; manifold decomposition processes; polymerization; silicone molecule; silicone vapor; temperature 293 K to 298 K; contact failure; decomposition; relay; silicone compound; silicone contamination; silicone vapor;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Electrical Contacts (ICEC 2012), 26th International Conference on
  • Conference_Location
    Beijing
  • Electronic_ISBN
    978-1-84919-508-9
  • Type

    conf

  • DOI
    10.1049/cp.2012.0658
  • Filename
    6301903