DocumentCode :
57060
Title :
Highly Reliable Multiple-Channel IGZO Thin-Film Transistors Employing Asymmetric Spacing and Channel Width
Author :
Choi, Seung-Ha ; Han, M.-K.
Author_Institution :
School of Electrical Engineering, Seoul National University, Seoul, Korea
Volume :
34
Issue :
6
fYear :
2013
fDate :
Jun-13
Firstpage :
771
Lastpage :
773
Abstract :
We designed and fabricated highly reliable multiple-channel indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) without any additional fabrication processes. We also investigated the geometric factors of the multiple-channel structure that influence the reliability of the IGZO TFTs in high saturation mode, such as the spacing and width of the subchannels. The proposed device exhibited superior reliability (\\Delta V_{\\rm TH}~< ~0.2~{\\rm V)} due to the larger spacing in the central part of the IGZO channel region, whereas the TFTs with the conventional structure showed a 3 V \\Delta V_{\\rm TH} shift. This is due to the more effective emission of heat induced inside the TFTs during operation.
Keywords :
Indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs); passivation; temperature;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2256457
Filename :
6515313
Link To Document :
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