We designed and fabricated highly reliable multiple-channel indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) without any additional fabrication processes. We also investigated the geometric factors of the multiple-channel structure that influence the reliability of the IGZO TFTs in high saturation mode, such as the spacing and width of the subchannels. The proposed device exhibited superior reliability
due to the larger spacing in the central part of the IGZO channel region, whereas the TFTs with the conventional structure showed a 3 V
shift. This is due to the more effective emission of heat induced inside the TFTs during operation.