Temperature Effects in Complementary Inverters Made With Polysilicon Source-Gated Transistors

Author

Sporea, Radu A. ; Trainor, Michael ; Young, Nigel ; Shannon, John M. ; Silva, S. Ravi P.

Author_Institution

Adv. Technol. Inst., Univ. of Surrey, Guildford, UK

Volume

62

Issue

5

fYear

2015

fDate

May-15

Firstpage

1498

Lastpage

1503

Abstract

Through their high gain and low saturation voltage, source-gated transistors (SGTs) have applications in both analog and digital thin-film circuits. In this paper, we show how we can design SGT-based logic gates, which are practically unaffected by temperature variations. We discuss design characteristics, which ensure reliable operation in spite of SGT temperature dependence of drain current, and their implications for manufacturability and large signal operation.

Keywords

logic design; logic gates; thin film transistors; SGT temperature dependence; SGT-based logic gates; analog thin-film circuits; complementary inverters; digital thin-film circuits; drain current; polysilicon source-gated transistors; temperature effects; Inverters; Logic gates; Switches; Temperature; Temperature dependence; Transistors; Complementary logic gate; Schottky barrier; gain; noise margin (NM); polysilicon (poly-Si); source-gated transistor (SGT); temperature effects; thin-film transistor; thin-film transistor.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2412452

Filename

7072460