• DocumentCode
    57173
  • Title

    Integrated BiCMOS Control Circuits for High-Performance DC–DC Boost Converter

  • Author

    Lee, Chan-Soo ; Oh, Young-Jin ; Na, Kee-Yeol ; Kim, Yeong-Seuk ; Kim, Nam-Soo

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Chungbuk Nat. Univ., Cheong-Ju, South Korea
  • Volume
    28
  • Issue
    5
  • fYear
    2013
  • fDate
    May-13
  • Firstpage
    2596
  • Lastpage
    2603
  • Abstract
    This paper introduces the design of integrated BiCMOS current-sensing circuit and amplifier for high-performance current-mode dc-dc boost converter. By exploiting the advantage presented by the integration of both CMOS and bipolar devices within same technology, the BiCMOS circuits offers high-gain amplifier and accurately sensed inductor current. The error amplifier has BJT differential pair and current sources to obtain a fast response, while the current-sensing circuit exploits a current-mirror instead of opamplifier as a voltage follower. The test in 0.35-μm BiCMOS process shows that the transient time of the error amplifier is about 4 μs and the current-sensing circuit can operate with accuracy of 88% at the frequency of 20 kHz. The output voltage of 4.8-8 V is obtained at the input voltage of 3-5 V with the ripple ratio within 5%.
  • Keywords
    BiCMOS analogue integrated circuits; DC-DC power convertors; bipolar transistors; operational amplifiers; BJT differential pair; BiCMOS current-sensing circuit; bipolar devices; current-mirror; error amplifier; frequency 20 kHz; high-gain amplifier; high-performance current-mode DC-DC boost converter; inductor current sensor; integrated BiCMOS control circuit; opamplifier; size 0.35 mum; voltage 3 V to 5 V; voltage 4.8 V to 8 V; voltage follower; BiCMOS integrated circuits; MOSFET circuits; Operational amplifiers; Resistance; Sensors; Threshold voltage; Transistors; BiCMOS; boost; current-mirro; current-sensing; integrated;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2012.2217156
  • Filename
    6331550