• DocumentCode
    572104
  • Title

    Intraband radioluminescence of dielectrics: Properties and applications to high power beams diagnostics

  • Author

    Vaysburd, D.I. ; Syomin, B.N.

  • Author_Institution
    High Current Electron. Inst., Tomsk, Russia
  • Volume
    2
  • fYear
    1992
  • fDate
    25-29 May 1992
  • Firstpage
    1360
  • Lastpage
    1366
  • Abstract
    This kind of dielectric´s light emission was discovered by the authors in 1972–1980. It may be Induced either by electron or ion, X-ray, or even laser beam irradiation if the latter can generate secondary electrons of energy 2–20 eV above the conduction band bottom in dielectric. If the pulse of irradiation is short (1–10 ps) or the temperature of a sample is high (more than 600 K) then the intraband luminescence will be the brightest type of dielectric light emission induced by ionizing beam irradiation. It has some extreme properties in comparison with all the other kinds of light emission: the broadest continuous spectrum (0–25 eV), the shortest time relaxation (1 ps), the absolute temperature Independence up to the boiling point. Due to these properties intraband luminescence is one of the most convenient optical effects to visualize high power particle beam.
  • Keywords
    Absorption; Acoustic beams; Charge carrier processes; Crystals; Laser beams; Luminescence; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High-Power Particle Beams, 1992 9th International Conference on
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    000-0-0000-0000-0
  • Type

    conf

  • Filename
    6306667