Upsets in Phase Change Memories Due to High-LET Heavy Ions Impinging at an Angle

Author

Gerardin, Simone ; Bagatin, Marta ; Paccagnella, Alessandro ; Visconti, Angelo ; Bonanomi, M. ; Beltrami, S. ; Ferlet-Cavrois, Veronique

Author_Institution

DEI, Univ. di Padova, Padua, Italy

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3491

Lastpage

3496

Abstract

We present the first evidence of single event upsets in 45-nm phase change memories caused by high linear energy transfer (LET) heavy ions at tilted angles along the word line. Angular and LET dependences are presented, together with a discussion of the possible underlying mechanisms. The occurrence of a thermal spike, due to the ion passage, close to the heater/storage element interface is identified as the most plausible explanation. The upset cross section is compared with that of NOR Flash and finally the impact of scaling on the sensitivity of future memories is analyzed.

Keywords

phase change memories; radiation hardening (electronics); LET dependence; angular dependence; heater-storage element interface; high-LET heavy ions; ion passage; linear energy transfer; phase change memories; single event upsets; size 45 nm; thermal spike; tilted angles; word line; Microprocessors; Nonvolatile memory; Phase change memory; Radiation effects; Single event upsets; Nonvolatile memories; phase change memories; single event upsets;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2367655

Filename

6966802