Single Event Effects in Carbon Nanotube-Based Field Effect Transistors Under Energetic Particle Radiation

Author

Bushmaker, Adam W. ; Walker, David ; Mann, Colin J. ; Oklejas, Vanessa ; Hopkins, Alan R. ; Amer, Moh R. ; Cronin, Stephen B.

Author_Institution

Phys. Sci. Labs., Aerosp. Corp., El Segundo, CA, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

2839

Lastpage

2846

Abstract

We present results from proton radiation experiments with carbon nanotube field effect transistors. Single event effects were observed consisting of drops in current, with very long durations (100 s of ms), and sudden, discrete switching events between quantized current levels. These studies are important for the development and understanding of advanced nano-electronic devices operating in the space radiation environment.

Keywords

carbon nanotube field effect transistors; proton effects; radiation hardening (electronics); carbon nanotube field effect transistors; discrete switching events; energetic particle radiation; proton radiation experiments; quantized current levels; single event effects; space radiation environment; Carbon nanotubes; Field effect transistors; Logic gates; Proton radiation effects; Radiation effects; Carbon nanotube; field effect transistor (FET); proton radiation; single event effects (SEEs);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2367519

Filename

6966808