Simulation of Very Fast Transient Overvoltage on UHV 1000kV GIS Test Circuit

Author

Hu, Rong ; Cui, Xiang ; Chen, Weijiang ; Sun, Zelai ; Qi, Lei ; Zhang, Weidong ; Li, Zhibin ; Dai, Min

Author_Institution

State Key Lab. of Alternate Electr. Power Syst. with Renewable Energy Sources, North China Electr. Power Univ., Beijing, China

fYear

2012

fDate

19-21 June 2012

Firstpage

1

Lastpage

4

Abstract

Some partial IEC reference circuit models of gas-insulated switchgear (GIS) components have been slightly modified, and make them apply to a wide frequency range which meets VFTO calculation requirement, combine with analytical formulas and the finite element method (FEM), extract the calculation parameters of the main GIS components, establish the equivalent circuit models of the main GIS components. Take a UHV 1000kV GIS test circuit as an example, calculate the very fast transient overvoltage(VFTO) both on the load side and the power supply side of GIS, compare the results of calculations and measurements, Verify the correctness and validity of modeling methods and equivalent circuit models of GIS components.

Keywords

equivalent circuits; finite element analysis; gas insulated switchgear; overvoltage; power supply quality; reference circuits; UHV GIS test circuit; VFTO calculation requirement; equivalent circuit; finite element method; gas-insulated switchgear; partial IEC reference circuit; power supply side; very fast transient overvoltage; voltage 1000 kV; Analytical models; Ducts; Equivalent circuits; Gas insulation; Integrated circuit modeling; Load modeling; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Field Problems and Applications (ICEF), 2012 Sixth International Conference on

Conference_Location

Dalian, Liaoning

Print_ISBN

978-1-4673-1333-9

Type

conf

DOI

10.1109/ICEF.2012.6310404

Filename

6310404