DocumentCode
5740
Title
Changing the channel
Author
Stevenson, Ricky
Volume
50
Issue
7
fYear
2013
fDate
Jul-13
Firstpage
34
Lastpage
39
Abstract
The transistor isn´t shrinking the way it used to. The best ones we have today are a patchwork of fixes and kludges: speed-boosting materials that push or pull on the silicon center, exotic insulators added to stanch leaks, and a new geometry that pops things out of the plane of the chip and into the third dimension. Now, to keep Moore´s Law going, chipmakers are eyeing another monumental change in transistor architecture. This time, they´re taking aim at the current-carrying channels at the very heart of the device, replacing the silicon there with germanium and compound semiconductors known as III-Vs. If all goes well, these materials could usher in a new generation of speedier, less power-hungry transistors, allowing for denser, faster, cooler-running chips.
Keywords
III-V semiconductors; germanium; insulators; transistors; III-V semiconductor; Moore Law; compound semiconductor; current-carrying channel; exotic insulator; germanium; silicon; speed-boosting material; transistor architecture; Crystals; Indium phosphide; Semiconductor devices; Silicon; Transistors;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.2013.6545120
Filename
6545120
Link To Document