• DocumentCode
    57425
  • Title

    Modeling and Investigations on TID-ASETs Synergistic Effect in LM124 Operational Amplifier From Three Different Manufacturers

  • Author

    Roig, Fabien ; Dusseau, L. ; Khachatrian, Ani ; Roche, Nicholas J.-H ; Privat, A. ; Vaille, J.-R. ; Boch, J. ; Warner, Jeffrey H. ; Saigne, F. ; Buchner, Stephen P. ; McMorrow, Dale ; Ribeiro, P. ; Auriel, G. ; Azais, Bruno ; Marec, R. ; Calvel, P. ; Beze

  • Author_Institution
    CEA (Gramat), Gramat, France
  • Volume
    60
  • Issue
    6
  • fYear
    2013
  • fDate
    Dec. 2013
  • Firstpage
    4430
  • Lastpage
    4438
  • Abstract
    The synergistic effect between Total Ionizing Dose (TID) and Analog Single Event Transient (ASET) in LM124 operational amplifiers (opamps) from three different manufacturers is investigated. This effect is clearly identified on only two manufacturers by three, highlighting manufacturer dependent. In fact, significant variations were observed on both the TID sensitivity and the ASET response of LM124 devices from different manufacturers. Hypotheses are made on the cause of the differences observed. A previously developed ASET simulation tool is used to model the transient response. The effects of TID on devices are taken into account in the model by injecting the variations of key electrical parameters obtained during Co60 irradiation. An excellent agreement is observed between the experimental responses and the model outputs, independently of the TID level, the bias configuration and the manufacturer of the device.
  • Keywords
    operational amplifiers; sensitivity; single electron devices; transient response; ASET response; LM124 operational amplifier; TID sensitivity; analog single event transient; bias configuration; key electrical parameters; opamps; synergistic effect; total ionizing dose; transient response; Bipolar integrated circuits; Integrated circuit modeling; Performance evaluation; Radiation effects; Single event transients; Transient response; Bipolar analog integrated circuits; circuit modeling; ionizing dose; single event transient; transient response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2013.2280294
  • Filename
    6636097