Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Author

Kuan-Chang Chang ; Tsung-Ming Tsai ; Ting-Chang Chang ; Hsing-Hua Wu ; Jung-Hui Chen ; Yong-En Syu ; Geng-Wei Chang ; Tian-Jian Chu ; Guan-Ru Liu ; Yu-Ting Su ; Min-Chen Chen ; Jhih-Hong Pan ; Jian-Yu Chen ; Cheng-Wei Tung ; Hui-Chun Huang ; Ya-Hsiang Tai

Author_Institution

Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

Volume

34

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

399

Lastpage

401

Abstract

Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm´s law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.

Keywords

random-access storage; Ohm law; Poole Frenkel behavior; current voltage fitting data; filament theory; forming free behaviors; high resistance state; low resistance state; resistive switching; semiconductor industries; silicon oxide based resistance random access memory; silicon oxide materials; transport mechanism; zinc doped silicon oxide RRAM; Electrodes; Resistance; Silicon; Switches; Tin; Zinc oxide; Filament; Zn; resistive switch; silicon oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2241725

Filename

6461910