Title :
Non-contact temperature measurement for silicon wafers under 600 °C
Author :
Toyoda, Yuki ; Iuchi, Tohru
Author_Institution :
Sch. of Eng., Toyo Univ., Saitama, Japan
Abstract :
We studied a non-contact temperature measurement method for silicon wafers based on the temperature dependence of polarized transmittance. This method with the use of p-polarized transmittance at a Brewster angle in unaffected by thicknesses of dielectric layers such as silicon dioxide (SiO2) or silicon nitride (Si3N4). This method is available in the temperature range between room and 600 degrees Celsius using the two wavelengths of 1.20 and 1.30 μm, more preferable if 1.25 μm is included.
Keywords :
quality control; semiconductor technology; silicon compounds; substrates; temperature measurement; Brewster angle; Si3N4; SiO2; dielectric layer thickness; noncontact temperature measurement; polarized transmittance; silicon dioxide; silicon nitride; silicon wafer; temperature 293 K to 298 K; temperature 600 degC; temperature dependence; wavelength 1.2 mum to 1.3 mum; Absorption; Conductivity; Films; Ocean temperature; Silicon; Substrates; Temperature measurement; Brewster angle; Transmittance; dielectric film; polarization; silicon wafer; temperature;
Conference_Titel :
SICE Annual Conference (SICE), 2012 Proceedings of
Conference_Location :
Akita
Print_ISBN :
978-1-4673-2259-1
