Non-contact temperature measurement for silicon wafers under 600 °C

Author

Toyoda, Yuki ; Iuchi, Tohru

Author_Institution

Sch. of Eng., Toyo Univ., Saitama, Japan

fYear

2012

fDate

20-23 Aug. 2012

Firstpage

27

Lastpage

31

Abstract

We studied a non-contact temperature measurement method for silicon wafers based on the temperature dependence of polarized transmittance. This method with the use of p-polarized transmittance at a Brewster angle in unaffected by thicknesses of dielectric layers such as silicon dioxide (SiO₂) or silicon nitride (Si₃N₄). This method is available in the temperature range between room and 600 degrees Celsius using the two wavelengths of 1.20 and 1.30 μm, more preferable if 1.25 μm is included.

Keywords

quality control; semiconductor technology; silicon compounds; substrates; temperature measurement; Brewster angle; Si₃N₄; SiO₂; dielectric layer thickness; noncontact temperature measurement; polarized transmittance; silicon dioxide; silicon nitride; silicon wafer; temperature 293 K to 298 K; temperature 600 degC; temperature dependence; wavelength 1.2 mum to 1.3 mum; Absorption; Conductivity; Films; Ocean temperature; Silicon; Substrates; Temperature measurement; Brewster angle; Transmittance; dielectric film; polarization; silicon wafer; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SICE Annual Conference (SICE), 2012 Proceedings of

Conference_Location

Akita

ISSN

pending

Print_ISBN

978-1-4673-2259-1

Type

conf

Filename

6318400