Title :
Systematic large-signal verification procedure for mm-wave SiGe bipolar transistors
Author :
Essing, J. ; Leenaerts, D. ; Mahmoudi, R.
Author_Institution :
Mixed-Signal Microelectron. Group, Eindhoven Univ. of Technol., Eindhoven, Netherlands
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
This paper describes a systematic large-signal verification procedure for mm-wave SiGe bipolar transistors. The verification paradigm is composed out of three complementary procedures: modeling of the intrinsic device(s), collecting measured data at the tips of probes and de-embedding the test fixture from measured data. The procedure is demonstrated for single and multi-device structures at two distinct operating frequencies, namely 900MHz and 30GHz. The verification between the measured and simulated data, reveals an accuracy of .3dB and 7% for respectively output power level and efficiency. Based on this verification procedure, a realistic overview of device performance describes in terms of PAE as function of Po over various frequencies and device-sizes, is extracted.
Keywords :
Ge-Si alloys; UHF bipolar transistors; millimetre wave bipolar transistors; millimetre wave measurement; semiconductor device models; semiconductor device testing; PAE; SiGe; device performance; frequency 30 GHz; frequency 900 MHz; intrinsic device modeling; millimetre wave SiGe bipolar transistors; multidevice structure; probes tips; single device structure; systematic large-signal verification procedure; test fixture deembedding; Fixtures; Frequency measurement; Harmonic analysis; Performance evaluation; Periodic structures; Semiconductor device measurement; Voltage measurement; Bipolar transistors; microwave measurements; microwave power amplifiers; mm-wave;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352636
