Title :
Extraction of the emitter related space charge weighting factor parameters of HICUM L2.30 using the Lambert W function
Author :
Stein, F. ; Huszka, Z. ; Derrier, N. ; Maneux, C. ; Celi, D.
Author_Institution :
STMicroelectron., Crolles, France
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
The base-emitter (BE) depletion charge weighting factor hjei accounts for the variation of the BE space charge region (SCR) with bias. In former HICUM model releases this weighting factor was a fixed model parameter value independent of device bias or temperature. With recent technology advancements and aggressively scaled vertical profiles incorporating significant germanium fractions a new model formulation was introduced. However the increased model complexity calls for a more sophisticated parameter extraction strategy. A novel extraction method is presented that is based on the solution of the new HICUM L2.30 formulation with the help of the Lambert W function. The extraction flow is presented and validated using a mature BiCMOS process technology available for mass-production.
Keywords :
BiCMOS integrated circuits; elemental semiconductors; germanium; integrated circuit modelling; BiCMOS process technology; Ge; HICUM L2.30; HICUM model; Lambert W function; base-emitter depletion charge weighting factor; base-emitter space charge region variation; emitter related space charge weighting factor parameters; extraction flow; model formulation; Current measurement; Junctions; Mathematical model; Silicon germanium; Temperature; Temperature dependence; Temperature measurement; RF circuits; Silicon bipolar/BiCMOS process technology; analog circuits; bipolar modeling and simulation; device physics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352638