Title :
From the future to the mainstream, has GaAs reliability finally come of age?
Author :
Roesch, William J.
Author_Institution :
TriQuint Semicond., Inc., Hillsboro, OR, USA
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
Compound semiconductor circuits are flourishing in high volume production which has been expected and predicted for several years. As these GaAs circuits become more widely considered for use in applications of various electronic systems, instruments, and devices, questions regarding reliability arise.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor device reliability; GaAs; Gallium arsenide; Integrated circuit reliability; Metallization; Silicon; GaAs; HBT; RF circuits; building-in; continuous improvement; design influence; device physics; failure mechanisms; pHEMT; reliability;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352645
