Title :
A V-band Differential SiGe VCO with varactor-less tuning
Author :
Zeinolabedinzadeh, Saeed ; Lourenco, Nelson E. ; Kamarei, M. ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., N.W. Georgia Tech, Atlanta, GA, USA
fDate :
Sept. 30 2012-Oct. 3 2012
Abstract :
A SiGe V-band voltage-controlled oscillator (VCO) with varactor-less tuning is presented. The frequency tuning of the VCO is accomplished using the CCB capacitance of the core transistors themselves. Removing the varactors within the VCO is particularly useful for millimeter-wave applications since varactors significantly degrade the quality factor of the resonator within the VCO and consequently the phase noise. This VCO utilizes a differential cross-coupled topology. The 67 GHz VCO was implemented in a commercial 180 nm SiGe BiCMOS platform and achieves a 6.7% tuning range and 0.3 dBm differential output power. The VCO achieves -90 dBC/Hz phase noise at 1 MHz offset from the 67 GHz signal.
Keywords :
BiCMOS analogue integrated circuits; field effect MIMIC; millimetre wave oscillators; millimetre wave transistors; phase noise; voltage-controlled oscillators; BiCMOS platform; SiGe; V-band differential VCO; V-band differential voltage-controlled oscillator; core transistors; differential cross-coupled topology; frequency 67 GHz; millimeter-wave applications; phase noise; resonator; size 180 nm; varactorless tuning; Capacitance; Phase noise; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators; Millimeter-Wave; RF circuits; Silicon bipolar/BiCMOS process technology; Tuning range; VCO;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012 IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4673-3020-6
DOI :
10.1109/BCTM.2012.6352656