• DocumentCode
    576743
  • Title

    Scaling Effects in Highly Scaled Commercial Nonvolatile Flash Memories

  • Author

    Irom, Farokh ; Nguyen, Duc N. ; Allen, Gregory R. ; Zajac, Stephanie A.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol. Pasadena, Pasadena, CA, USA
  • fYear
    2012
  • fDate
    16-20 July 2012
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    SEE measurements and TID response for 25 nm Micron Technology NAND flash memories are reported. Radiation results of MLC 64 Gb parts are compared with results from SLC 32 Gb parts. Also, scaling effects on SEE and TID are discussed.
  • Keywords
    flash memories; radiation effects; random-access storage; SEE measurements; TID response; highly scaled commercial nonvolatile flash memory; micron technology NAND flash memory; radiation results; scaling effects; size 25 nm; Annealing; Flash memory; Radiation effects; Silicon; Single event upset; Temperature measurement; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation Effects Data Workshop (REDW), 2012 IEEE
  • Conference_Location
    Tucson, AZ
  • ISSN
    2154-0519
  • Print_ISBN
    978-1-4673-2730-5
  • Type

    conf

  • DOI
    10.1109/REDW.2012.6353720
  • Filename
    6353720
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=576743