• DocumentCode
    577898
  • Title

    Developments in high performance photodiodes

  • Author

    Joshi, Abhay

  • Author_Institution
    Discovery Semicond., Ewing, NJ, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    As the current handling - bandwidth product of a single photodiode comprised of lattice matched In0.53Ga0.47As/InP material reaches a practical limit, we explore new lattice mismatched material system of In0.72Ga0.28As/InAsP/InP as a path-forward technology to increase this key parameter.
  • Keywords
    arsenic compounds; gallium compounds; indium compounds; optical lattices; photodiodes; In0.72Ga0.28As-InAsP-InP; current handling; high performance photodiodes; lattice mismatched material system; path-forward technology; Indium phosphide; Lattices; Optical fiber communication; Optical noise; Optical sensors; Photodiodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358536
  • Filename
    6358536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=577898