• DocumentCode
    577929
  • Title

    Short SiGe HBT electro-absorption modulator

  • Author

    Wu, Pengfei ; Deng, Shengling ; Huang, Z. Rena

  • Author_Institution
    Electr., Comput., & Syst. Eng. Dept., Rensselaer Polytech. Inst., Troy, NY, USA
  • fYear
    2012
  • fDate
    23-27 Sept. 2012
  • Firstpage
    282
  • Lastpage
    283
  • Abstract
    A SiGe HBT electro-absorption modulator with a device length of 69 μm is proposed. Calculations show that the modulator works at a speed of 25 GHz and can achieve a 10 dB extinction ratio.
  • Keywords
    Ge-Si alloys; electro-optical modulation; electroabsorption; heterojunction bipolar transistors; optical interconnections; HBT electroabsorption modulator; SiGe; extinction ratio; frequency 25 GHz; heterojunction bipolar transistors; optical interconnections; size 69 mum; Electrooptic modulators; Heterojunction bipolar transistors; Optical switches; Silicon; Silicon germanium; Electro-absorption modulator; SiGe HBT; optical interconnections;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2012 IEEE
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    978-1-4577-0731-5
  • Type

    conf

  • DOI
    10.1109/IPCon.2012.6358602
  • Filename
    6358602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=577929