DocumentCode
577936
Title
High-power high-bandwidth flip-chip bonded modified uni-traveling carrier photodiodes
Author
Zhou, Qiugui ; Cross, Allen ; Fu, Yang ; Beling, Andreas ; Campbell, Joe C.
Author_Institution
ECE Dept., Univ. of Virginia, Charlottesville, VA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
306
Lastpage
307
Abstract
Modified uni-traveling carrier (MUTC) photodiodes with diameter of 28 μm and 20 μm flip-chip bonded on AlN substrate demonstrated RF output power of 25 dBm and 19 dBm at 25 GHz and 30 GHz, respectively.
Keywords
flip-chip devices; integrated optoelectronics; microwave photonics; photodetectors; photodiodes; AlN; AlN substrate; MUTC photodiodes; RF output power; frequency 25 GHz; frequency 30 GHz; high-power high-bandwidth flip-chip bonding; modified unitraveling carrier photodiodes; size 20 mum; size 28 mum; Bandwidth; Bonding; Flip chip; Photoconductivity; Photodiodes; Power generation; Radio frequency; Photodectors; Photodiodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358614
Filename
6358614
Link To Document