DocumentCode
577942
Title
Monolithic tunable laser based on selectively intermixed GaAs/AlGaAs QW structure
Author
Zakariya, Abdullah J. ; LiKamWa, P.
Author_Institution
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
328
Lastpage
329
Abstract
We demonstrate a monolithic 10nm tunable integrated laser on a QW structure. Wavelength switching is achieved by steering an optical gain media laterally over two adjacent quantum well regions selectively intermixed to varying extents.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser tuning; quantum well lasers; GaAs-AlGaAs; monolithic tunable integrated laser; monolithic tunable laser; optical gain media; selectively intermixed quantum well structure; wavelength switching; Gain; Gallium arsenide; Laser beams; Optical amplifiers; Optical beams; Optical device fabrication; Optical switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358625
Filename
6358625
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