DocumentCode
577968
Title
Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers
Author
Liu, Guangyu ; Zhang, Jing ; Tan, Chee-Keong ; Tansu, Nelson
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2012
fDate
23-27 Sept. 2012
Firstpage
431
Lastpage
432
Abstract
The characteristics of InGaN quantum wells light-emitting diodes with thin large bandgap AlGaInN barriers were analyzed with taking into account the carrier transport effect, which resulted in efficiency-droop suppression.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical materials; semiconductor quantum wells; wide band gap semiconductors; InGaN-AlGaInN; carrier transport effect; efficiency-droop suppression; light emitting diodes; quantum wells; thin large-bandgap barrier layers; Gallium nitride; IEEE Lasers and Electro-Optics Society; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Conference (IPC), 2012 IEEE
Conference_Location
Burlingame, CA
Print_ISBN
978-1-4577-0731-5
Type
conf
DOI
10.1109/IPCon.2012.6358677
Filename
6358677
Link To Document