Title :
Bismide alloys for photonic devices: Potential and progress
Author :
Sweeney, Stephen J.
Author_Institution :
Dept. of Phys., Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
Abstract :
This paper discusses how the addition of Bismuth to III-V alloys gives rise to improved band structure potentially offering reduced non-radiative losses and improved temperature stability for devices in the near- and mid-infrared.
Keywords :
III-V semiconductors; laser stability; optical losses; photonic band gap; semiconductor lasers; III-V alloys; band structure; bismide alloys; nonradiative losses; photonic devices; temperature stability; Bismuth; Gallium arsenide; Indium phosphide; Photonic band gap; Strain; Substrates;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6358765
