Title :
InAs/GaAs quantum-dot lasers monolithically grown on Si substrate
Author :
Liu, Huiyun ; Lee, Andrew ; Jiang, Qi ; Seeds, Alwyn
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
We present the studies on the development of InAs/GaAs quantum-dot lasers monolithically grown on Si for Si photonics. Room-temperature lasing near 1.3 μm has been demonstrated for the devices on Si and Ge substrates.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; indium compounds; nanophotonics; quantum dot lasers; silicon; Ge; Ge substrates; InAs-GaAs; InAs/GaAs quantum-dot lasers; Si; Si photonics; Si substrate; monolithic growth; room-temperature lasing; Gallium arsenide; Photonics; Quantum dot lasers; Silicon; Substrates; Temperature;
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
DOI :
10.1109/IPCon.2012.6359276
