DocumentCode :
578296
Title :
High-mobility low-power flexible ZnO thin film transistors on plastic substrates
Author :
Takalloo, Saeedeh Ebrahimi ; Servati, Peyman
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
fYear :
2012
fDate :
23-27 Sept. 2012
Firstpage :
897
Lastpage :
898
Abstract :
This paper presents a high-mobility low-power ZnO thin film transistor deposited at low temperature on plastic substrates. A mobility of 52 cm2/Vs is achieved for this transistor, signifying its application in flexible electronics and displays.
Keywords :
II-VI semiconductors; carrier mobility; flexible electronics; plastics; substrates; thin film transistors; zinc compounds; ZnO; flexible display; flexible electronics; high mobility low power flexible thin film transistor; plastic substrates; Films; Plasma temperature; Silicon; Substrates; Thin film transistors; Zinc oxide; flexible substrate; low temperature deposition; metal oxide semiconductors; thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics Conference (IPC), 2012 IEEE
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4577-0731-5
Type :
conf
DOI :
10.1109/IPCon.2012.6359284
Filename :
6359284
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=578296
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