• DocumentCode
    578487
  • Title

    A compact noise model for carbon nanotube FETs

  • Author

    Landauer, Gerhard Martin ; González, José Luis

  • Author_Institution
    Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain
  • fYear
    2012
  • fDate
    24-26 Sept. 2012
  • Firstpage
    53
  • Lastpage
    56
  • Abstract
    This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a minimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF building blocks.
  • Keywords
    carbon nanotube field effect transistors; CNFET-based RF building block; RF carbon nanotube field-effect transistor; compact noise model; frequency 60 GHz; noise figure; noise mechanism; radiofrequency CNFET; Analytical models; CNTFETs; Logic gates; Nickel; Noise measurement; Predictive models; Semiconductor device modeling; Carbon nanotube; analog; field-effect transistor; noise modeling; radiofrequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
  • Conference_Location
    Grenoble
  • Print_ISBN
    978-1-4673-1717-7
  • Type

    conf

  • DOI
    10.1109/ISCDG.2012.6359993
  • Filename
    6359993
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=578487