Structured epitaxial graphene on SiC

Author

Ming Ruan ; Yike Hu ; Zelei Guo ; Rui Dong ; Palmer, Joseph ; Hankinson, J. ; Berger, Claire ; de Heer, Walt A. ; Chakraborty, Partha S. ; Lourenco, Nuno ; Cressler, John

Author_Institution

Sch. of Phys., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2012

fDate

24-26 Sept. 2012

Firstpage

49

Lastpage

51

Abstract

We present recent results on epitaxial graphene high frequency FETs and a new concept of graphene nano-structuration. Nano-patterned epitaxial graphene grown on SiC is produced by etching the silicon carbide before annealing so that the graphene structures are produced in their final shapes. This avoids post-annealing patterning that is known to greatly affect transport properties on the nanoscale.

Keywords

annealing; etching; field effect transistors; graphene; nanoelectronics; nanopatterning; nanostructured materials; silicon compounds; SiC; annealing; etching; field effect transistor; graphene nanostructuration; high frequency FET; nanopatterned epitaxial graphene; nanoscale; structured epitaxial graphene; transport property; Atomic clocks; Atomic layer deposition; Epitaxial growth; Lead; Silicon carbide; TV; field effet transistors; graphene; structuration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International

Conference_Location

Grenoble

Print_ISBN

978-1-4673-1717-7

Type

conf

DOI

10.1109/ISCDG.2012.6359994

Filename

6359994