Title :
Impact of effective capacitance area on the characterization of SOI Wafers by Split-C(V) in Pseudo-MOSFET configuration
Author :
Fernandez, Camino ; Diab, A. ; Rodriguez, N. ; Ohata, A. ; Allibert, F. ; Ionica, Irina ; Gamiz, F. ; Cristoloveanu, S.
Author_Institution :
Nanoelectron. Res. Group, Univ. of Granada, Granada, Spain
Abstract :
The Pseudo-MOSFET is a very successful characterization technique which can be further enriched by adopting split-C(V) measurements for mobility evaluation. In this work, we investigate the impact of the effective surface on the accurate evaluation of gate-to-channel capacitance in Pseudo-MOSFETs. The surprising dependence of the effective area on the AC signal frequency has been analyzed and modelled for a configuration with an arbitrary number of needles.
Keywords :
MOSFET; capacitance; semiconductor device measurement; silicon-on-insulator; AC signal frequency; SOI wafer; capacitance area; gate-to-channel capacitance; mobility evaluation; pseudoMOSFET configuration; split-C(V) measurement; Capacitance; Logic gates; Needles;
Conference_Titel :
Semiconductor Conference Dresden-Grenoble (ISCDG), 2012 International
Conference_Location :
Grenoble
Print_ISBN :
978-1-4673-1717-7
DOI :
10.1109/ISCDG.2012.6360040
