• DocumentCode
    580932
  • Title

    Spatial correlation modeling for probe test cost reduction in RF devices

  • Author

    Kupp, Nathan ; Huang, Ke ; Carulli, John M., Jr. ; Makris, Yiorgos

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • fYear
    2012
  • fDate
    5-8 Nov. 2012
  • Firstpage
    23
  • Lastpage
    29
  • Abstract
    Test cost reduction for RF devices has been an ongoing topic of interest to the semiconductor manufacturing industry. Automated test equipment designed to collect parametric measurements, particularly at high frequencies, can be very costly. Together with lengthy set up and test times for certain measurements, these cause amortized test cost to comprise a high percentage of the total cost of manufacturing semiconductor devices. In this work, we investigate a spatial correlation modeling approach using Gaussian process models to enable extrapolation of performances via sparse sampling of probe test data. The proposed method performs an order of magnitude better than existing spatial sampling methods, while requiring an order of magnitude less time to construct the prediction models. The proposed methodology is validated on manufacturing data using 57 probe test measurements across more than 3,000 wafers. By explicitly applying probe tests to only 1% of the die on each wafer, we are able to predict probe test outcomes for the remaining die within 2% of their true values.
  • Keywords
    Gaussian processes; automatic test equipment; correlation methods; cost reduction; extrapolation; probes; semiconductor device manufacture; semiconductor device measurement; semiconductor device testing; semiconductor industry; Gaussian process model; RF device; automated test equipment; extrapolation; parametic measurement collection; probe test cost reduction; semiconductor manufacturing industry; sparse spatial sampling method; spatial correlation modeling approach; Data models; Gaussian processes; Kernel; Probes; Radio frequency; Semiconductor device measurement; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on
  • Conference_Location
    San Jose, CA
  • ISSN
    1092-3152
  • Type

    conf

  • Filename
    6386584