Circuit reliability: From Physics to Architectures: Embedded tutorial paper

Author

Fang, Jianxin ; Gupta, Saket ; Kumar, Sanjay V. ; Marella, Sravan K. ; Mishra, Vivek ; Zhou, Pingqiang ; Sapatnekar, Sachin S.

Author_Institution

ECE Dept., Univ. of Minnesota, Minneapolis, MN, USA

fYear

2012

fDate

5-8 Nov. 2012

Firstpage

243

Lastpage

246

Abstract

In the period of extreme CMOS scaling, reliability issues are becoming a critical problem. These problems include issues related to device reliability, in the form of bias temperature instability, hot carrier injection, time-dependent dielectric breakdown of gate oxides, as well as interconnect reliability concerns such as electromigration and TSV stress in 3D integrated circuits. This tutorial surveys these effects, and discusses methods for mitigating them at all levels of design.

Keywords

CMOS integrated circuits; dielectric devices; electric breakdown; integrated circuit reliability; 3D integrated circuits; TSV stress; bias temperature instability; circuit reliability; electromigration; extreme CMOS scaling; gate oxides; hot carrier injection; interconnect reliability; physics to architectures; time-dependent dielectric breakdown; Degradation; Design automation; Integrated circuit modeling; Integrated circuit reliability; Logic gates; Stress; 3D ICs; Bias temperature instability; electromigration; hot carriers; oxide breakdown; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on

Conference_Location

San Jose, CA

ISSN

1092-3152

Type

conf

Filename

6386616