DocumentCode :
581015
Title :
Ultra high density logic designs using transistor-level monolithic 3D integration
Author :
Lee, Young-Joon ; Morrow, Patrick ; Lim, Sung Kyu
Author_Institution :
Sch. of ECE, Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2012
fDate :
5-8 Nov. 2012
Firstpage :
539
Lastpage :
546
Abstract :
Recent innovations in monolithic 3D technology enable much higher-density vertical connections than today´s through-silicon-via (TSV)-based technology. In this paper, we investigate the benefits and challenges of monolithic 3D integration technology for ultra high-density logic designs. Based on our layout experiments, we compare important design metrics such as area, wirelength, timing, and power consumption of monolithic 3D designs with the traditional 2D designs. We also explore various interconnect options for monolithic 3D ICs that improve design density and quality. Depending on the interconnect settings of monolithic 3D ICs and the benchmark circuit characteristics, we observe that our two-tier monolithic 3D design provides up to 40% reduced footprint, 27.7% shorter wirelength, 39.7% faster operation, and 9.7% lower power consumption over the 2D counterpart.
Keywords :
integrated circuit layout; logic design; three-dimensional integrated circuits; higher density vertical connections; layout experiment; monolithic 3D integration technology; transistor level monolithic 3D integration; ultrahigh density logic design; Integrated circuit interconnections; Layout; Libraries; Metals; Routing; Standards; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design (ICCAD), 2012 IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Type :
conf
Filename :
6386723
Link To Document :
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