A Compact Single Stage V-Band CMOS Injection-Locked Power Amplifier With 17.3% Efficiency

This letter presents a fully integrated CMOS V-band injection-locked power amplifier (ILPA) for phase and frequency modulated millimeter-Wave (mm-Wave) transmitter. At mm-Wave frequency, multi-stage PAs are usually employed to achieve enough power gain due to low power gain of CMOS transistor even though it has low power efficiency. This work investigates mm-Wave ILPA for constant envelope modulation transmitter with high gain and high efficiency. The proposed ILPA has been implemented in 65 nm CMOS technology, a 17.3% Power Added Efficiency (PAE) and 9.6 dBm peak output power have been achieved with a single stage design in a compact size at 1.2 V supply voltage.