DocumentCode :
584273
Title :
Session Summary IV: Post-Silicon Measurements and Tests: Analog Test and High-Speed I/O Test II
Author :
Yamaguchi, Takahiro J.
fYear :
2012
fDate :
19-22 Nov. 2012
Firstpage :
245
Lastpage :
245
Abstract :
Summary form only given, as follows. Dynamic faults are more likely to occur in more scaled technologies. One of the challenges in testing Static Random Access Memory (SRAM) is ´dynamic faults,´ which are sensitized by multiple read or write operations. These faults cannot be sensitized by a single read or write operation. Paper 7B.1 [Renesas] discusses SRAM dynamic stability testing. This includes read-write disturbance issues and an advanced on-chip test circuit which provides a word-line pulse of variable pulse widths to the internal nodes of the dual-port SRAM under measurement. Post-silicon data validated that the proposed circuit can screen the read-write disturb failures. Technology scaling enables us to trade off amplitude resolution for time resolution. This is called Staszewski´s law. Accordingly, both internal and external tests are also shifting from voltage centric tests to timing centric tests. Post-silicon jitter/phase noise characterization of the first-silicon fabricated for a PLL design can provide both actual timing uncertainty information and BER performance degradation due to jitter. Paper 7B.2 [Univ. of Tokyo] addresses all-digital test circuits and on-chip jitter analyzer macros to characterize advanced all-digital PLLs. Moreover, in order to measure sub-ps timing jitter, implementation of a practical on-chip circuit faces severe difficulties associated with providing a jitter-free reference clock to the on-chip instrument and realizing a fail counter of high time resolution. Paper 7B.3 [Gunma Univ.] introduces a new architecture for measuring on-chip timing jitter. The new architecture requires no reference clock and can directly measure timing jitter by combining a fail counter of appropriate time resolution and a time difference amplifier with a gain of 100. Finally, an ATE based solution is required in order to perform high-volume post-silicon validation of high-speed serial I/O (HSIO) devices and test fabricated silicon copies. Paper - B.4 [Advantest] demonstrates that an active test fixture approach can test 28 Gb/s HSIO devices by MUX / DEMUX of currently available 7 Gb/s pin electronics channels. BER jitter bathtub curves were also successfully measured with a time resolution of 400 fs.
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Symposium (ATS), 2012 IEEE 21st Asian
Conference_Location :
Niigata, Japan
ISSN :
1081-7735
Print_ISBN :
978-1-4673-4555-2
Electronic_ISBN :
1081-7735
Type :
conf
DOI :
10.1109/ATS.2012.87
Filename :
6394208
Link To Document :
بازگشت