A full-wave analysis of the parasitic coupling between right-angle mitered bends microstrip discontinuities

Author

Cicchetti, Renato ; Testa, Orlandino

Author_Institution

Dept. of Inf. Eng., Electron. & Telecommun., Sapienza Univ. of Rome, Rome, Italy

fYear

2012

fDate

17-21 Sept. 2012

Firstpage

1

Lastpage

4

Abstract

A full-wave analysis of the parasitic coupling effects between right-angle mitered bends microstrip discontinuities is presented. The full-wave analysis is performed by means of the spectral domain approach (SDA) which allows to include the effects caused by the surface and volume waves excited by the discontinuity. Using the computed field quantities, the scattering parameters of the structure are obtained and used to derived an equivalent circuit suitable to model the dispersive effects and the parasitic coupling caused by the microstrip discontinuities. The analysis is carried out by varying the electrical and geometrical parameters that characterize the considered structures.

Keywords

S-parameters; equivalent circuits; microstrip discontinuities; SDA; dispersive effects; electrical parameters; equivalent circuit; full-wave analysis; geometrical parameters; parasitic coupling effects; right-angle mitered bends microstrip discontinuity; scattering parameters; spectral domain approach; surface waves; volume waves; Couplings; Electromagnetics; Equivalent circuits; Integrated circuit modeling; Microstrip; Scattering parameters; equivalent circuit; microstrip discontinuities; parasitic coupling effects; right-angle mitered bend;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC EUROPE), 2012 International Symposium on

Conference_Location

Rome

ISSN

2325-0356

Print_ISBN

978-1-4673-0718-5

Type

conf

DOI

10.1109/EMCEurope.2012.6396671

Filename

6396671