Title :
Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)
Author :
Zhou, Liang ; Lin, Liang ; Luo, Wei ; Yin, Wen-Yan
Author_Institution :
Center for Microwave & RF Technol., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
Investigation on conductive electromagnetic pulse (EMP) effects on performance degradation and breakdown of GaAs MESFET-based power amplifiers (PA) are performed in this paper. One special measurement system is built, which consists of an adjustable EMP source, one controller, couplers, limiters, attenuators, one four-channel oscilloscope, and DUT. The PA performance degradation and electrothermal breakdown of its first-stage GaAs MESFET are observed and analyzed for the injected EMP with different widths, and its energy capabilities are characterized and studied in detail.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electromagnetic pulse; gallium arsenide; power amplifiers; semiconductor device breakdown; DUT; EMP effect; GaAs; GaAs MESFET; PA performance degradation; attenuator; conductive electromagnetic pulse; controller; coupler; electrothermal breakdown; energy capability; four-channel oscilloscope; limiter; power amplifier; Degradation; Electric breakdown; Electromagnetic interference; Gallium arsenide; MESFETs; Microwave circuits; Pulse measurements; Breakdown; EMP; Electrothermal; GaAs MESFET; Pulse Width;
Conference_Titel :
Electromagnetic Compatibility (EMC EUROPE), 2012 International Symposium on
Conference_Location :
Rome
Print_ISBN :
978-1-4673-0718-5
DOI :
10.1109/EMCEurope.2012.6396757
