Title :
Nanosecond switching of high power laser activated silicon switches
Author :
Zucker, O.S. ; Long, J.R. ; Smith, V.L. ; Page, D.J. ; Roberts, J.S.
Author_Institution :
Lawrence Livermore Lab., Univ. of California Livermore, Livermore, CA, USA
Abstract :
Light activated multilayered silicon semiconductor devices have been used to switch at Megawatt power levels with nanosecond turnon time. Current rate of rise of 700 KA/NS at 10 KAMP, with 1 kV across the load, has been achieved.
Keywords :
elemental semiconductors; semiconductor switches; Megawatt power levels; high power laser activated silicon switches; multilayered silicon semiconductor devices; nanosecond switching; nanosecond turnon time; voltage 1 kV; Radiative recombination; Semiconductor device measurement;
Conference_Titel :
Electron Beam Research & Technology, 1975 International Topical Conference on
Conference_Location :
Albuquerque, NM
Print_ISBN :
0-8493-6926-6
